Publications

NLR develops technical publications about its R&D activities in power electronics materials and manufacturing exploration.

Do We Really Need All That Data: From Data to Agency in Automated Microscopy, Microscopy Today (2026) 

Performance of Heterostructural TaC/AlGaN Schottky Diodes Based on First Principles Electronic Structure Properties, APL Computational Physics (2026)

Phonon Selection and Interference in Momentum-resolved Electron Energy Loss Spectroscopy, arXiv (2026)

Low Temperature Growth of AlGaN by Halide Vapor Phase Epitaxy, arXiv (2026)

Thermally Desorbed InN Capping Layers for Nitride Surface Science, arXiv (2026)

Fast Epitaxial Growth of Ga2O3 on Highly-Offcut (100)-Oriented Substrates, arXiv (2026)

Born-Qualified: An Autonomous Framework for Deploying Advanced Energy and Electronic Materials, arXiv (2026)

Revealing the Atomic Structure of NiO/Ga2O3 Interfaces, arXiv (2026)

Low Resistance NiO/β-Ga2O3 Heterojunction Diodes Grown via Molecular Beam Epitaxy, arXiv (2026)

Enhanced Thermal Conductivity of (010) (AlₓGa1-ₓ)₂O₃ Epitaxial Films Utilizing Indium-Catalyzed Molecular Beam Epitaxy, arXiv (2026)

Revealing Epitaxial Relationships at Ga2O3 Interfaces With p-Type Oxides, arXiv (2026)

Face-to-Face Anneal Temperature Controls Lattice Parameter in Ta(C,N) Virtual Substrates for AlGaN Power Electronics, arXiv (2026)

Scandium Diboride: A Semi-Metallic, Lattice, Thermally Matched Substrate for Vertical AlGaN Power Electronics, arXiv (2026)

Balancing Autonomy and Oversight in Language-Agent-Guided Physical Experimentation, Research Square (2026)

A Transport Framework for Evaluating Nanoscale Interconnect Materials: A Tutorial, arXiv (2026)

Impact of Dislocation Motion on Interdiffusion, Structuring, and Thermal Transport at Ge–Si Heterointerface, Journal of Applied Physics (2026)

Crystal Growth and Characterization of the Ultra-High Temperature Substrate Ta1–xHfxC0.5, Crystal Growth & Design (2026)

Emerging Ultra-Wide Band Gap Semiconductors for Future High-Frequency Electronics, arXiv (2025)

Understanding Phonon Selection and Interference in Momentum-Resolved Electron Energy Loss Spectroscopy, arXiv (2025)

Infrared Phonon Thermoreflectance in Polar Dielectrics, arXiv (2025)

Epitaxial Growth and Semiconductor Properties of NiGa2O4 spinel for Ga2O3/NiO interfaces, arXiv (2025)

Reduced Thermal Resistance of Al-rich AlGaN HEMTs via Top-side Diamond Integration, APL Electronic Devices (2025)

Dielectric Properties of Conducting Boron-Doped Diamond, Applied Optics (2025)

Temperature Invariant, Nearly Zero Temperature Coefficient of Resistivity in Si-Doped Titanium Nitrides, Advanced Materials (2025)

Self-Driving Microscopy for Ai/Ml-Enabled Physics Discovery and Materials Optimization, The Bridge (2025)

Characterization of Extended Defect Evolution in 1.2–12μm Thick Homoepitaxial (010) Β-Ga2o3 Grown by Close-Injection Showerhead Metal-Organic Chemical Vapor Deposition, APL Materials (2025)

Emerging Ultra-Wide Band Gap Semiconductors for Future High-Frequency Electronics, arXiv (2025)

Stability, Growth, and Doping of In2(Si, Ge)2o7: Promising N-Type Wide-Bandgap Semiconductors, APL Materials (2025)